Title :
The impact of gate dielectric nitridation methodology on NBTI of SiON p-MOSFETs as studied by UF-OTF technique
Author :
Maheta, V.D. ; Olsen, C. ; Ahmed, K. ; Mahapatra, S.
Author_Institution :
Dept. of Electr. Eng., IIT Bombay, Mumbai
Abstract :
The impact of gate dielectric nitridation methodology on time, temperature and field dependence of NBTI in SiON p-MOSFETs is studied using Ultra-Fast On-The-Fly IDLIN technique with 1mus resolution. It is shown that PNO devices with proper PNA show lower degradation magnitude, higher field dependence and therefore higher safe operating voltage compared to RTNO and PNO devices with improper PNA despite atomic N% is higher in PNO devices with proper PNA.
Keywords :
MOSFET; nitridation; silicon compounds; stability; NBTI; PNO devices; SiON; UF-OTF technique; gate dielectric nitridation; negative bias temperature instability; p-MOSFET; ultra-fast on-the-fly IDLIN technique; Atomic measurements; Degradation; Delay; Dielectrics; MOSFET circuits; Niobium compounds; Plasma temperature; Presence network agents; Stress measurement; Titanium compounds;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2039-1
Electronic_ISBN :
978-1-4244-2040-7
DOI :
10.1109/IPFA.2008.4588198
