A study of NBTI in HfSiON/TiN p-MOSFETs using ultra-fast on-the-fly (UF-OTF) IDLIN technique

Author

Deora, Shweta ; Mahapatra, Souvik

Author_Institution

Dept. of Electr. Eng., IIT Bombay, Mumbai

fYear

2008

fDate

7-11 July 2008

Firstpage

1

Lastpage

4

Abstract

Negative bias temperature instability (NBTI) is studied in HfSiON/TiN p-MOSFETs having thin (2 nm) and thick (3 nm) HfSiON layer on top of 1 nm SiO₂ interfacial layer. By using ultra fast on the fly IDLIN technique, the impact of stress temperature (T) and oxide field (E_OX) on NBTI time evolution is studied. The thickness of the HfSiON layer is shown to have negligible impact on time, T and E_OX dependence of NBTI. The impact of time-zero (t₀) delay on power law time exponent (n), E_OX acceleration (Gamma) of degradation and E_OX acceleration (beta) of time to fail (tt_F) is also studied. The t₀ does not impact Gamma but strongly impacts n, beta and hence extracted safe operating voltage (V_GSAFE).

Keywords

MOSFET; hafnium compounds; semiconductor device reliability; HfSiON; NBTI; negative bias temperature instability; oxide field; p-MOSFET; stress temperature; ultra-fast on-the-fly IDLIN technique; Acceleration; Degradation; Delay effects; MOSFET circuits; Negative bias temperature instability; Niobium compounds; Stress; Tin; Titanium compounds; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the

Conference_Location

Singapore

Print_ISBN

978-1-4244-2039-1

Electronic_ISBN

978-1-4244-2040-7

Type

conf

DOI

10.1109/IPFA.2008.4588200

Filename

4588200