DocumentCode :
2410311
Title :
Physical characterization challenges in 45 nm technology node
Author :
Li, K. ; Liu, P. ; Wang, Q. ; Tee, I. ; Teong, J.
Author_Institution :
Chartered Semicond. Manuf. Ltd., Singapore
fYear :
2008
fDate :
7-11 July 2008
Firstpage :
1
Lastpage :
4
Abstract :
The advent of 45 nm technology poses a real challenge to device physical characterization. The shrinkage in dimension makes the characterization of some critical structures very difficult or impossible. The adoption of ultra low K materials even worsens the situation. In this paper, an attempt is made to address some of the challenging characterization issues and some solutions are provided with the aim to facilitate 45 nm process development and optimization.
Keywords :
integrated circuit technology; integrated circuits; physical characterization; process development; process optimization; ultralow K materials; Degradation; Electron beams; Focusing; Ion beams; Lighting; Manufacturing industries; Pulp manufacturing; Semiconductor device manufacture; Shadow mapping; Wood industry;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2008. IPFA 2008. 15th International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2039-1
Electronic_ISBN :
978-1-4244-2040-7
Type :
conf
DOI :
10.1109/IPFA.2008.4588202
Filename :
4588202
Link To Document :
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