• DocumentCode
    2410568
  • Title

    Extreme latchup susceptibility in modern commercial-off-the-shelf (COTS) monolithic 1M and 4M CMOS static random-access memory (SRAM) devices

  • Author

    Page, Thomas E., Jr. ; Benedetto, Joseph M.

  • Author_Institution
    Raytheon Missile Syst., Tucson, AZ, USA
  • fYear
    2005
  • fDate
    11-15 July 2005
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    Recent SEE testing of 1M and 4M monolithic SRAMs at Brookhaven National Laboratories has shown an extreme sensitivity to single-event latchup (SEL). We have observed SEL at the minimum heavy-ion LET available at Brookhaven, 0.375 MeV-cm2/mg.
  • Keywords
    CMOS memory circuits; SRAM chips; heavy ion-nucleus reactions; integrated circuit testing; ion beam effects; neutron effects; 1M monolithic SRAM; 4M monolithic SRAM; commercial-off-the-shelf static random-access memory devices; extreme latchup susceptibility; linear energy transfer; minimum heavy-ion LET; monolithic 1M CMOS static random-access memory; monolithic 4M CMOS static random-access memory; neutron-induced latchup; single event effects; single-event latchup; Aerospace industry; Artificial satellites; Laboratories; Manufacturing; Military satellites; Missiles; Random access memory; Satellite broadcasting; Semiconductor device testing; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2005. IEEE
  • Print_ISBN
    0-7803-9367-8
  • Type

    conf

  • DOI
    10.1109/REDW.2005.1532657
  • Filename
    1532657
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2410568