Title :
Extreme latchup susceptibility in modern commercial-off-the-shelf (COTS) monolithic 1M and 4M CMOS static random-access memory (SRAM) devices
Author :
Page, Thomas E., Jr. ; Benedetto, Joseph M.
Author_Institution :
Raytheon Missile Syst., Tucson, AZ, USA
Abstract :
Recent SEE testing of 1M and 4M monolithic SRAMs at Brookhaven National Laboratories has shown an extreme sensitivity to single-event latchup (SEL). We have observed SEL at the minimum heavy-ion LET available at Brookhaven, 0.375 MeV-cm2/mg.
Keywords :
CMOS memory circuits; SRAM chips; heavy ion-nucleus reactions; integrated circuit testing; ion beam effects; neutron effects; 1M monolithic SRAM; 4M monolithic SRAM; commercial-off-the-shelf static random-access memory devices; extreme latchup susceptibility; linear energy transfer; minimum heavy-ion LET; monolithic 1M CMOS static random-access memory; monolithic 4M CMOS static random-access memory; neutron-induced latchup; single event effects; single-event latchup; Aerospace industry; Artificial satellites; Laboratories; Manufacturing; Military satellites; Missiles; Random access memory; Satellite broadcasting; Semiconductor device testing; Space technology;
Conference_Titel :
Radiation Effects Data Workshop, 2005. IEEE
Print_ISBN :
0-7803-9367-8
DOI :
10.1109/REDW.2005.1532657
