• DocumentCode
    2410627
  • Title

    The effects of device metal interconnect overlayers on SEE testing

  • Author

    Wert, Jerry ; Normand, Eugene ; Hafer, Craig

  • Author_Institution
    Boeing Co., Seattle, WA, USA
  • fYear
    2005
  • fDate
    11-15 July 2005
  • Firstpage
    20
  • Lastpage
    25
  • Abstract
    Technology advances in wafer processing and design, new device requirements and improved modeling necessitate the need for a careful determination of LET at and through the critical silicon region of interest during SEE testing.
  • Keywords
    interconnections; radiation effects; semiconductor device metallisation; semiconductor device testing; SEE testing; device metal interconnect overlayers; linear energy transfer; single event effects testing; wafer design; wafer processing; Aluminum; Chemical technology; Energy exchange; Integrated circuit interconnections; Manufacturing processes; Semiconductor device modeling; Silicon; Telephony; Testing; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2005. IEEE
  • Print_ISBN
    0-7803-9367-8
  • Type

    conf

  • DOI
    10.1109/REDW.2005.1532660
  • Filename
    1532660
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2410627