• DocumentCode
    2410661
  • Title

    Interpreting InGaP/GaAs DHBT eye diagrams using small signal parameters

  • Author

    Venkatesha, D.B. ; Chitrashekaraiah, S. ; Rezazadeh, A.A. ; Thiede, A.

  • Author_Institution
    Univ. of Manchester, Manchester
  • fYear
    2007
  • fDate
    9-12 Oct. 2007
  • Firstpage
    1257
  • Lastpage
    1260
  • Abstract
    In this paper we present measurement of eye patterns and their analysis for InGaP/GaAs DHBTs between 1 and 3 Gb/s PRBS signal. Eye diagrams have been measured and also simulated for comparison and further analysis. By adopting a robust direct parameter extraction technique all the small signal parameters of the DHBTs are deduced and are then used to simulate the corresponding eye patterns. The necessary procedure for simulating eye patterns is established in ADS so as the extraction of important eye parameters such as the eye height, amplitude, signal to noise ratio, rise and fall times. The eye parameters deteriorate with increase in frequency leading to the closure of the eye. An attempt has been made to recognise the main physical parameters of the device which influence the shape and formation of the eye diagrams and the observations has been discussed in this paper. These results provide an insight into device optimisation for user specified eye diagrams.
  • Keywords
    III-V semiconductors; eye; feature extraction; gallium arsenide; heterojunction bipolar transistors; indium compounds; DHBT eye diagrams; GaAs; InGaP; robust direct parameter extraction technique; signal to noise ratio; small signal parameters; user specified eye diagrams; Analytical models; Bit rate; Circuits; DH-HEMTs; Gallium arsenide; Oscilloscopes; Shape; Signal analysis; Signal design; Signal generators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2007. European
  • Conference_Location
    Munich
  • Print_ISBN
    978-2-87487-001-9
  • Type

    conf

  • DOI
    10.1109/EUMC.2007.4405429
  • Filename
    4405429