• DocumentCode
    2410757
  • Title

    The slow relaxation of capacitance in ferroelectric devices under electrical pulse influence

  • Author

    Tumarkin, A.V. ; Razumov, S.V. ; Gagarin, A.G. ; Gaidukov, M.M. ; Kozyrev, A.B.

  • Author_Institution
    St. Petersburg Electrotech. Univ., St. Petersburg
  • fYear
    2007
  • fDate
    9-12 Oct. 2007
  • Firstpage
    1275
  • Lastpage
    1278
  • Abstract
    The influence of technology parameters and construction of ferroelectric capacitors on capacitance relaxation mechanisms in BaxSr1-xTiO3 (BSTO) varactors prepared by ion-plasma deposition technique has been investigated. The slow relaxation phenomenon (10divide100 s) in ferroelectric elements in paraelectric state can be explained by the presence of space charge localized on trapping defects in high defected interface layer electrode-ferroelectric.
  • Keywords
    barium compounds; dielectric relaxation; ferroelectric capacitors; strontium compounds; varactors; BaSrTiO3; capacitance relaxation; electrical pulse influence; ferroelectric capacitors; ion plasma deposition; slow relaxation; trapping defects; varactors; Capacitance measurement; Capacitors; Charge carriers; Electrodes; Ferroelectric devices; Ferroelectric materials; Polarization; Pulse measurements; Space charge; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2007. European
  • Conference_Location
    Munich
  • Print_ISBN
    978-2-87487-001-9
  • Type

    conf

  • DOI
    10.1109/EUMC.2007.4405434
  • Filename
    4405434
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2410757