Derivation of a behavioral RF power amplifier model with low normalized mean-square error

In this paper a behavioral power amplifier model with substantially lower normalized mean-square error than the well-known and widely used parallel Hammerstein or tapped delay line model is presented. This is significant since the parallel Hammerstein model currently must be considered to be the baseline for behavioral power amplifier modeling efforts. The proposed model does also have at least as low total error as any other model known to the authors for measurements on class-AB LDMOS power amplifiers. Further, the proposed model exhibits an equal or lower out-of-band error than the parallel Hammerstein model The parameters of the model can be extracted using straightforward system identification techniques. Together this makes the proposed model a strong candidate to replace the parallel Hammerstein model as the model of choice for behavioral power amplifier modeling for many applications.