Title :
The Twin Cell for a New Dynamic Storage Approach in Three 18K FET RAM Chips
Author :
Haug, W. ; Schnadt, R.
Author_Institution :
IBM Labs., Boeblingen, Germany
Abstract :
The twin cell - a double-ended dynamic two-device FET memory cell - is the basic element for a really symmetrical sense system. This new approach has successfully been used in three different byte wide 18K RAM chips.
Keywords :
field effect transistor circuits; integrated memory circuits; random-access storage; FET RAM chips; double-ended dynamic two-device FET memory cell; dynamic storage; twin cell; Buffer storage; Circuits; Control systems; Decoding; FETs; Laboratories; Random access memory; Read-write memory; Switches; Timing;
Conference_Titel :
Solid State Circuits Conferene, 1980. ESSCIRC 80. 6th European
Conference_Location :
Grenoble
DOI :
10.1109/ESSCIRC.1980.5468764
