• DocumentCode
    2410945
  • Title

    Total dose degradation of low-dropout voltage regulators

  • Author

    Miyahira, T.F. ; Rax, B.G. ; Johnston, A.H.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    2005
  • fDate
    11-15 July 2005
  • Firstpage
    127
  • Lastpage
    131
  • Abstract
    A low dropout voltage regulator that uses a lateral pnp transistor as a pass transistor in the output stage is evaluated for total dose degradation. Degradation occurs from two different mechanisms, one involving gradual degradation due to changes in internal reference voltage resulting in small changes in output voltage saturation characteristics; and the other causing the output voltage to fall to nearly zero because of gain degradation in the lateral pnp output transistor. Additionally, wide variability was observed between two different lots of devices, produced approximately 18 months apart. This illustrates the importance of lot-sample testing when these highly sensitive devices are considered for use in space.
  • Keywords
    bipolar transistor circuits; circuit testing; radiation effects; voltage regulators; gain degradation; internal reference voltage; lateral pnp output transistors; low-dropout voltage regulators; output voltage saturation; total dose degradation; Circuit testing; Degradation; Low voltage; Packaging; Propulsion; Regulators; Semiconductor device manufacture; Space technology; System testing; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop, 2005. IEEE
  • Print_ISBN
    0-7803-9367-8
  • Type

    conf

  • DOI
    10.1109/REDW.2005.1532678
  • Filename
    1532678