DocumentCode
2410996
Title
Total ionizing dose effects in bipolar and BiCMOS devices
Author
Chavez, Rosa M. ; Rax, Bernard G. ; Scheick, Leif Z. ; Johnston, Allan H.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear
2005
fDate
11-15 July 2005
Firstpage
144
Lastpage
148
Abstract
This paper describes total ionizing dose (TID) test results performed at JPL. Bipolar and BiCMOS device samples were tested exhibiting significant degradation and failures at different irradiation levels. Linear technology which is susceptible to low-dose dependency (ELDRS) exhibited greater damage for devices tested under zero bias condition.
Keywords
BiCMOS analogue integrated circuits; bipolar analogue integrated circuits; integrated circuit testing; radiation effects; BiCMOS devices; bipolar devices; complementary metal oxide semiconductors; enhanced low dose rate sensitivity; low dose level; low-dose dependency; total ionizing dose effects; Automatic testing; BiCMOS integrated circuits; Circuit testing; Integrated circuit testing; Laboratories; Propulsion; Semiconductor device testing; Space technology; System testing; Telephony;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation Effects Data Workshop, 2005. IEEE
Print_ISBN
0-7803-9367-8
Type
conf
DOI
10.1109/REDW.2005.1532681
Filename
1532681
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