DocumentCode :
2411046
Title :
High Speed High Density Poly I2L
Author :
Elsaid, M.H. ; Hashed, Ali M.
Author_Institution :
Dept. of Electron. & Comput., Ain Shams Univ., Cairo, Egypt
fYear :
1980
fDate :
22-25 Sept. 1980
Firstpage :
209
Lastpage :
211
Abstract :
A new poly I2L structure with switching speed three times higher than that of the conventional I2L structure is presented. The packing density is also improved by a factor of two using this new structure.
Keywords :
high-speed integrated circuits; high speed high density poly I2L structure; packing density; switching speed; Capacitance; Delay; Epitaxial layers; Etching; Fabrication; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Circuits Conferene, 1980. ESSCIRC 80. 6th European
Conference_Location :
Grenoble
Type :
conf
DOI :
10.1109/ESSCIRC.1980.5468774
Filename :
5468774
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2411046
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