DocumentCode :
2411074
Title :
Dielectric charging process in AlN RF-MEMS capacitive switches
Author :
Papaioannou, George J. ; Lisec, Tomas
Author_Institution :
Univ. of Athens, Athens
fYear :
2007
fDate :
9-12 Oct. 2007
Firstpage :
1338
Lastpage :
1341
Abstract :
The paper investigates the electrical properties of magnetron sputtered A1N in view of application in RF-MEMS capacitive switches. The assessment is performed with the aid of application of thermally stimulate polarization currents in MIM capacitors and temperature dependence of device capacitance. The study reveals the presence of a surface charge, which is smaller than the expected from material spontaneous polarization, but definitely is responsible for the low degradation rate under certain bias polarization life tests.
Keywords :
microswitches; polarisation; sputtering; MIM capacitor; RF-MEMS capacitive switch; device capacitance; dielectric charging process; magnetron sputtering; metal-insulator-metal device; microelectromechanical system; polarization current; Capacitance; Dielectrics; MIM capacitors; Magnetic materials; Magnetic properties; Magnetic switching; Polarization; Radiofrequency microelectromechanical systems; Switches; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-001-9
Type :
conf
DOI :
10.1109/EUMC.2007.4405450
Filename :
4405450
Link To Document :
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