Recent progress in vertical cavity surface emitting lasers

Author

Ebeling, K.J.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

fYear

1998

fDate

4-8 Oct. 1998

Firstpage

5

Lastpage

6

Abstract

Efficient VCSELs are available in the 750 to 1050 nm wavelength range. Devices are based on InAlGaAs materials and MOVPE or MBE crystal growth. Typically, modulation doped, low resistance AlGaAs Bragg reflectors are monolithically integrated with one wavelength thick quantum well containing active layers.

Keywords

MOCVD; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; integrated optoelectronics; molecular beam epitaxial growth; optical interconnections; quantum well lasers; surface emitting lasers; 750 to 1050 nm; InAlGaAs materials; MBE crystal growth; MOVPE; VCSELs; active layers; low resistance AlGaAs Bragg reflectors; modulation doped; monolithically integrated; one wavelength thick quantum well; quantum well lasers; vertical cavity surface emitting lasers; Electrons; Epitaxial layers; Optical interconnections; Optical noise; Optical resonators; Optical sensors; Optical surface waves; Power generation; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Conference_Location

Nara, Japan

ISSN

0899-9406

Print_ISBN

0-7803-4223-2

Type

conf

DOI

10.1109/ISLC.1998.734111

Filename

734111