• DocumentCode
    2411474
  • Title

    On the universality of negative bias temperature degradation

  • Author

    Alam, M.A. ; Mahapatra, S. ; Islam, A.E. ; Jain, A.

  • Author_Institution
    School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana Indian Institute of Technology, Bombay, India
  • fYear
    2010
  • fDate
    17-21 Oct. 2010
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Over last five years, many industrial/academic research groups have characterized the NBTI degradation through power-law exponents, universality of relaxation, frequency and duty cycle dependencies by using a wide variety of characterization techniques. The scatter in the data has inspired a range of modeling efforts regarding NBTI degradation, with important implications for projected lifetime and technology qualification. In this talk, we will show that the scatter in the data hides a simple universality of the degradation characteristics and that universality of data imposes strict consistency requirements for NBTI theories. We conclude by showing that the existing protocol for qualification and circuit design are theoretically sound, and can be used without significant revision/refinement.
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International
  • Conference_Location
    S. Lake Tahoe, CA, USA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4244-8521-5
  • Type

    conf

  • DOI
    10.1109/IIRW.2010.5706471
  • Filename
    5706471