DocumentCode
2411474
Title
On the universality of negative bias temperature degradation
Author
Alam, M.A. ; Mahapatra, S. ; Islam, A.E. ; Jain, A.
Author_Institution
School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana Indian Institute of Technology, Bombay, India
fYear
2010
fDate
17-21 Oct. 2010
Firstpage
1
Lastpage
1
Abstract
Over last five years, many industrial/academic research groups have characterized the NBTI degradation through power-law exponents, universality of relaxation, frequency and duty cycle dependencies by using a wide variety of characterization techniques. The scatter in the data has inspired a range of modeling efforts regarding NBTI degradation, with important implications for projected lifetime and technology qualification. In this talk, we will show that the scatter in the data hides a simple universality of the degradation characteristics and that universality of data imposes strict consistency requirements for NBTI theories. We conclude by showing that the existing protocol for qualification and circuit design are theoretically sound, and can be used without significant revision/refinement.
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International
Conference_Location
S. Lake Tahoe, CA, USA
ISSN
1930-8841
Print_ISBN
978-1-4244-8521-5
Type
conf
DOI
10.1109/IIRW.2010.5706471
Filename
5706471
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