• DocumentCode
    2411489
  • Title

    On the ‘permanent’ component of NBTI

  • Author

    Grasser, T. ; Aichinger, Th ; Reisinger, H. ; Franco, J. ; Wagner, P.-J. ; Nelhiebel, M. ; Ortolland, C. ; Kaczer, B.

  • Author_Institution
    Christian Doppler Lab. for TCAD, Tech. Univ. Wien, Vienna, Austria
  • fYear
    2010
  • fDate
    17-21 Oct. 2010
  • Firstpage
    2
  • Lastpage
    7
  • Abstract
    A number of recent publications explain NBTI to be due to a recoverable and a more permanent component. While a lot of information has been gathered on the recoverable component, the permanent component has been somewhat elusive. We demonstrate that oxide defects commonly linked to the recoverable component also form an important contribution to the permanent component of NBTI. As such, they can contribute to both the threshold voltage shift as well as the charge pumping current. Under favorable conditions, the permanent component can show recovery rates comparable to that of the recoverable component.
  • Keywords
    charge pump circuits; defect states; NBTI; charge pumping current; oxide defects; permanent component; recoverable component; threshold voltage shift; Charge pumps; Degradation; Interface states; Iterative closest point algorithm; Stress; Temperature measurement; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International
  • Conference_Location
    Stanford Sierra, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4244-8521-5
  • Type

    conf

  • DOI
    10.1109/IIRW.2010.5706472
  • Filename
    5706472