Title :
Reliable high-temperature 50-70 mW CW operation of 659-nm window-mirror laser diodes
Author :
Sakamoto, Y. ; Shima, A. ; Hironaka, M. ; Ono, K. ; Takemi, M. ; Yamashita, K. ; Aiga, M.
Author_Institution :
Div. of High Frequency & Opt. Semicond., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A window-mirror laser diode (LD) with a long cavity length of 900-/spl mu/m lasing at 658.8 nm has shown a kink-free maximum output power of 141 mW. Even at 80/spl deg/C, CW maximum output power of 95 mW is obtained. Highly reliable operation for over 2,000 hours under the CW conditions of 70 mW at 60/spl deg/C and 50 mW at 70/spl deg/C has been realized, for the first time.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser cavity resonators; laser mirrors; laser reliability; laser transitions; life testing; optical testing; quantum well lasers; semiconductor device testing; 141 mW; 2000 h; 50 to 70 mW; 659 nm; 80 C; 900 mum; 95 mW; AlGaInP; CW conditions; CW maximum output power; GaInP; GaInP MQW laser; highly reliable operation; kink-free maximum output power; long cavity length; reliable high-temperature mW CW operation; window-mirror laser diodes; Aging; Degradation; Diode lasers; Optical recording; Optical saturation; Power generation; Power system reliability; Semiconductor device reliability; Temperature dependence; Testing;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734116
