DocumentCode :
2411543
Title :
Correlation between dielectric traps and BTI characteristics of high-k/ metal gate MOSFETs
Author :
Yang, J.Q. ; Yang, J.F. ; Kang, J.F. ; Liu, X.Y. ; Han, R.Q. ; Kirsch, P. ; Tseng, H-H ; Jammy, R.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fYear :
2010
fDate :
17-21 Oct. 2010
Firstpage :
17
Lastpage :
21
Abstract :
The extended flicker noise measurement incorporating with BTI evaluation is applied to investigate the bulk trapping density Nt in HK/MG stacks and the correlated BTI behaviors. An effective evaluating technique on BTI/TDDB is developed. This method will help to understand the physical original of BTI degradation.
Keywords :
MOSFET; high-k dielectric thin films; BTI evaluation; bias temperature instability characteristics; bulk trapping density; dielectric traps; extended flicker noise measurement; high-k metal gate MOSFET; 1f noise; Charge carrier processes; Dielectrics; Logic gates; MOS devices; MOSFET circuits; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International
Conference_Location :
Stanford Sierra, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4244-8521-5
Type :
conf
DOI :
10.1109/IIRW.2010.5706475
Filename :
5706475
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2411543
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