DocumentCode
2411588
Title
An Integrated MSI Crosspoints Array
Author
Blachere, J.M. ; Benichou, C. ; Braquet, H.
Author_Institution
IBM, France
fYear
1980
fDate
22-25 Sept. 1980
Firstpage
310
Lastpage
312
Abstract
A 144 elements array of transistor crosspoints has been realized. It achieves low insertion loss and high dynamic breakdown using a conventional bipolar technology. The chip measures 4.3 × 4.1 mm2 and is mounted on a 76 pins substrate.
Keywords
electric breakdown; integrated circuit design; transistor circuits; analog speech path; bipolar technology; dynamic breakdown; elements array; insertion loss; integrated MSI crosspoints array; transistor crosspoint; Anodes; Cathodes; Conductivity; Electric breakdown; Epitaxial growth; Insertion loss; Pins; Semiconductor device measurement; Substrates; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Circuits Conferene, 1980. ESSCIRC 80. 6th European
Conference_Location
Grenoble
Type
conf
DOI
10.1109/ESSCIRC.1980.5468800
Filename
5468800
Link To Document