• DocumentCode
    2411588
  • Title

    An Integrated MSI Crosspoints Array

  • Author

    Blachere, J.M. ; Benichou, C. ; Braquet, H.

  • Author_Institution
    IBM, France
  • fYear
    1980
  • fDate
    22-25 Sept. 1980
  • Firstpage
    310
  • Lastpage
    312
  • Abstract
    A 144 elements array of transistor crosspoints has been realized. It achieves low insertion loss and high dynamic breakdown using a conventional bipolar technology. The chip measures 4.3 × 4.1 mm2 and is mounted on a 76 pins substrate.
  • Keywords
    electric breakdown; integrated circuit design; transistor circuits; analog speech path; bipolar technology; dynamic breakdown; elements array; insertion loss; integrated MSI crosspoints array; transistor crosspoint; Anodes; Cathodes; Conductivity; Electric breakdown; Epitaxial growth; Insertion loss; Pins; Semiconductor device measurement; Substrates; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Circuits Conferene, 1980. ESSCIRC 80. 6th European
  • Conference_Location
    Grenoble
  • Type

    conf

  • DOI
    10.1109/ESSCIRC.1980.5468800
  • Filename
    5468800