DocumentCode
2411662
Title
B10 finding and correlation to thermal neutron soft error rate sensitivity for SRAMs in the sub-micron technology
Author
Wen, Shi-Jie ; Pai, S.Y. ; Wong, Richard ; Romain, Michael ; Tam, Nelson
fYear
2010
fDate
17-21 Oct. 2010
Firstpage
31
Lastpage
33
Abstract
In this paper, we report the presence of B10 based on SIMS analysis in SRAM arrays in the 90nm to 45nm technology nodes. The physical presence of B10 correlated very well with the thermal neutron soft error rate (SER) sensitivity of SRAM cells. This result confirmed that without BPSG layer in advanced Si technologies, there is still a high possibility of B10 contamination from the Fab process. Furthermore, a root cause of possible B10 source is suggested based on SIMS results.
Keywords
SRAM chips; integrated circuit testing; radiation hardening (electronics); B10 correlation; BPSG layer; SIMS analysis; SRAM; size 45 nm to 90 nm; thermal neutron soft error rate sensitivity; Neutrons; Random access memory; Semiconductor device measurement; Sensitivity; Silicon; Transistors; B10; SER; SIMS; SRAM; thermal neutron;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International
Conference_Location
Stanford Sierra, CA
ISSN
1930-8841
Print_ISBN
978-1-4244-8521-5
Type
conf
DOI
10.1109/IIRW.2010.5706480
Filename
5706480
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