Title :
Lasing at 1.3 /spl mu/m in strained quantum well lasers on InGaAs ternary substrates
Author :
Otsubo, K. ; Nishijima, Yosuke ; Uchida, Tomoyuki ; Shoji, Hajime ; Nakajima, Kensuke ; Ishikawa, Hiroshi
Author_Institution :
RWCP, Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
The InGaAs ternary substrates with an indium composition of 0.31 and 1.3 /spl mu/m strained quantum well lasers on them have been obtained for the first time. The temperature sensitivity of slope efficiency is -0.007 dB/K.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; sensitivity; substrates; 1.3 mum; InGaAs; InGaAs ternary substrates; InGaAs-InAlGaAs; indium composition; slope efficiency; strained quantum well lasers; temperature sensitivity; Electrons; Indium gallium arsenide; Laser excitation; Optical pulses; Photonics; Power lasers; Quantum well lasers; Reflectivity; Temperature;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734122
