Effects of well number on temperature characteristics in 1.3-/spl mu/m AlGaInAs/InP quantum well lasers

Author

Wada, Hiroyuki ; Takemasa, K. ; Munakata, T. ; Kobayashi, Masato ; Kamijoh, T.

Author_Institution

Oki Electr. Ind. Co. Ltd., Tokyo, Japan

fYear

1998

fDate

4-8 Oct. 1998

Firstpage

29

Lastpage

30

Abstract

Effects of well number on temperature characteristics have been investigated in 1.3-/spl mu/m AlGaInAs-InP multiple-quantum-well (MQW) lasers. A record high pulsed operating temperature of 220/spl deg/C has been achieved in lasers with 10 QWs and a small power reduction of -1.68 dB between 20 and 80/spl deg/C has been obtained in lasers with 4 QWs.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; 1.3 mum; 20 to 80 C; 220 C; AlGaInAs-InP; AlGaInAs-InP MQW lasers; AlGaInAs/InP quantum well lasers; record high pulsed operating temperature; small power reduction; temperature characteristics; well number; Filters; Four-wave mixing; Frequency conversion; Optical fiber devices; Optical fiber polarization; Optical frequency conversion; Optical noise; Semiconductor device noise; Semiconductor optical amplifiers; Signal to noise ratio;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Conference_Location

Nara, Japan

ISSN

0899-9406

Print_ISBN

0-7803-4223-2

Type

conf

DOI

10.1109/ISLC.1998.734123

Filename

734123