High average power density (0.2-0.65 kW/cm/sup 2/) diode laser stacks for 808 nm, 915 nm & 940 nm wavelengths

Author

Gupta, S. ; Garcia, A. ; Srinivasan, S. ; He, X. ; Wilson, S. ; Harrison, J. ; Patel, R.

Author_Institution

Opto-Power Corp., Tucson, AZ, USA

fYear

1998

fDate

4-8 Oct. 1998

Firstpage

53

Lastpage

54

Abstract

Combining developments in high-power (/spl sim/100 W) laser diode arrays and high heat flux (kW/cm/sup 2/) water-cooled Cu-´mini-channel´ heatsinks, we demonstrate record average power density operation of diode laser stacks. Using advanced die attachment, record CW power levels of 180 W and 108 W has been demonstrated at 915 nm & 808 nm, respectively, from 1 cm wide laser arrays on such heatsinks.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heat sinks; indium compounds; laser transitions; quantum well lasers; semiconductor laser arrays; 1 cm; 108 W; 180 W; 808 nm; 915 nm; 940 nm; AlGaAs-InGaAs-GaAs; Cu mini-channel heatsinks; advanced die attachment; diode laser stacks; high average power density; high heat flux; laser diode arrays; record CW power levels; record average power density operation; single quantum well laser arrays; water-cooled; Diode lasers; Electrons; Glass; Heat sinks; Impedance; Laser excitation; Life estimation; Optical arrays; Optical materials; Semiconductor laser arrays;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Conference_Location

Nara, Japan

ISSN

0899-9406

Print_ISBN

0-7803-4223-2

Type

conf

DOI

10.1109/ISLC.1998.734133

Filename

734133