Improved characteristic temperature of 780 nm AlGaAs/AlGaInP QW laser-diodes for high speed laser beam printer applications

Author

Valster, A. ; Weegels, L.M. ; Brouwer, A.A. ; Corbijn, A.J. ; van Engelen, G.J.P. ; Vermunt, L.W.A. ; Lodders, W.H.M.

Author_Institution

Philips Optoelectron. Res., Eindhoven, Netherlands

fYear

1998

fDate

4-8 Oct. 1998

Firstpage

55

Lastpage

56

Abstract

Reduced leakage current in 780 nm AlGaAs lasers-diodes is obtained for the first time by replacing AlGaAs cladding layers with AlGaInP ones. The overall temperature performance of the laser-diode is now drastically improved (T/sub 0/>200 K) resulting in a record low droop value (D<4%) over a wide temperature- and power range making these lasers extremely suitable for high-end laser beam printers.

Keywords

Debye temperature; III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; infrared sources; laser printers; laser transitions; leakage currents; quantum well lasers; 200 K; 780 nm; AlGaAs; AlGaAs cladding layers; AlGaAs/AlGaInP QW laser-diodes; AlGaInP; characteristic temperature; high speed laser beam printer applications; high-end laser beam printers; laser-diode; overall temperature performance; power range; record low droop value; reduced leakage current; wide temperature; Electrons; Laser stability; Leakage current; Power lasers; Printers; Quantum well lasers; Semiconductor lasers; Temperature dependence; Temperature distribution; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Conference_Location

Nara, Japan

ISSN

0899-9406

Print_ISBN

0-7803-4223-2

Type

conf

DOI

10.1109/ISLC.1998.734134

Filename

734134