Stability and bias stressing of metal/insulator/metal diodes

Author

Alimardani, N. ; Conley, J.F., Jr. ; Cowell, E.W., III ; Wager, J.F. ; Chin, M. ; Kilpatrick, S. ; Dubey, M.

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Oregon State Univ., Corvallis, OR, USA

fYear

2010

fDate

17-21 Oct. 2010

Firstpage

80

Lastpage

84

Abstract

The performance and stability of metal/insulator/metal tunnel diodes was investigated as a function of interfacial roughness using Al, Ir, Pt, and ultra-smooth amorphous multi-metal (ZrCuAlNi) bottom electrodes with uniform Al₂O₃ tunnel dielectrics deposited via atomic layer deposition. Current density versus field behavior and device yield were found to be a function of interfacial roughness with smoother electrodes exhibiting more ideal behavior and higher percentages of working devices. A preliminary investigation of DC bias stressed devices suggests that interfacial roughness plays a large role in stability and reliability as well.

Keywords

MIM devices; alumina; aluminium; aluminium alloys; atomic layer deposition; copper alloys; current density; iridium; nickel alloys; platinum; semiconductor device reliability; stability; tunnel diodes; zirconium alloys; Al₂O₃; Ir; Pt; Si-SiO₂; SiO₂; ZrCuAlNi; atomic layer deposition; bias stressing; current density; interfacial roughness; metal-insulator-metal tunnel diodes; stability; tunnel dielectrics; Aluminum oxide; Current density; Electrodes; Insulators; Semiconductor diodes; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International

Conference_Location

Stanford Sierra, CA

ISSN

1930-8841

Print_ISBN

978-1-4244-8521-5

Type

conf

DOI

10.1109/IIRW.2010.5706491

Filename

5706491