Title :
Design and measurement of 450MHz LNA utilizing 0.13um RF CMOS process
Author :
Salleh, Saafie ; Hashim, Mohd Fazli ; Rahman, A. A. Abdul ; Majid, Zulkifli Abd
Author_Institution :
Telekom R&D, Next Generation Access, Cyberjaya, Malaysia
Abstract :
A low-noise amplifier (LNA) integrated circuit (IC) has been designed and implemented on a 0.13um RF CMOS process technology. The LNA was designed to resonate at 450MHz frequency. This paper presents the design methodology and compares the simulated and measurement results of the cascode LNA with inductive degeneration. There were expected mismatch between simulation and measurement data, thus some of the matching elements were intentionally placed outside of the chip so adjustment can be done using external components. The overall design methodology employed in this work gives certain confidence that if the LNA resonates at intended frequency with specific input network matching, the same input network matching arrangement can be applied at the input of the same LNA at front-end of a complete Receive chain. On simulation, Noise Figure (NF) of the LNA was simulated at 1.23dB and Gain at 28.17dB.
Keywords :
CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; chip-on-board packaging; low noise amplifiers; RF CMOS process; UHF integrated circuits; cascode LNA; frequency 450 MHz; gain 28.17 dB; inductive degeneration; input network matching arrangement; low noise amplifiers; matching elements; noise figure 1.23 dB; size 0.13 mum; CMOS integrated circuits; Impedance matching; Integrated circuit modeling; Noise figure; Radio frequency; RF CMOS integrated circuit; cascode with inductive degeneration; chip-on board; external matching; low noise amplifier;
Conference_Titel :
Wireless Technology and Applications (ISWTA), 2012 IEEE Symposium on
Conference_Location :
Bandung
Print_ISBN :
978-1-4673-2209-6
DOI :
10.1109/ISWTA.2012.6373876
