Title :
Determination of the influence of Auger recombination on the threshold current of 1.3 /spl mu/m and 1.5 /spl mu/m InGaAs(P) strained-layer lasers and its variation with temperature
Author :
Sweeney, S.J. ; Phillips, A.F. ; Adams, A.R. ; O´Reilly, E.P. ; Thijs, P.J.A.
Author_Institution :
Dept. of Phys., Surrey Univ., Guildford, UK
Abstract :
We investigated the influence of Auger recombination from 90 K to above room temperature and found its contribution to the threshold current at 300 K to be about 80% and 50% at 1.5 /spl mu/m and at 1.3 /spl mu/m respectively.
Keywords :
Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; semiconductor lasers; 1.3 mum; 1.5 mum; 300 K; Auger recombination; InGaAsP; InGaAsP strained-layer lasers; above room temperature; threshold current; Current measurement; Laser theory; Photonic band gap; Pressure measurement; Quantum well lasers; Radiative recombination; Spontaneous emission; Temperature dependence; Temperature sensors; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734138
