High T/sub 0/ 1.3 /spl mu/m AlGaInAs/InP distributed feedback laser with complex-coupled grating growth by LP-MOCVD

Author

Bo Chen ; Wei Wang ; Xiao-Jie Wang ; Jin-Yuan Zhang ; Hong-Liang Zhu ; Zhou Fan

Author_Institution

Nat. Res. Centre for Optoelectron. Technol., Acad. Sinica, Beijing, China

fYear

1998

fDate

4-8 Oct. 1998

Firstpage

79

Lastpage

80

Abstract

A high T/sub 0/ 1.3 /spl mu/m AlGaInAs-InP MQW DFB laser, which was grown by LP-MOCVD, is demonstrated for the first time. The T/sub 0/ is up to 98K and the drop of 0.5dB in slope efficiency is achieved within 20 C to 80 C. A DFB laser with current blocking grating was realized successfully.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; semiconductor growth; 1.3 mum; 20 to 80 C; 98 K; AlGaInAs-InP; AlGaInAs/InP distributed feedback laser; DFB laser; LP-MOCVD; complex-coupled grating growth; current blocking grating; high T/sub 0/; slope efficiency; Distributed feedback devices; Electrons; Fiber lasers; Gratings; Indium phosphide; Laser feedback; Laser modes; Optical fiber communication; Quantum well devices; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Conference_Location

Nara, Japan

ISSN

0899-9406

Print_ISBN

0-7803-4223-2

Type

conf

DOI

10.1109/ISLC.1998.734146

Filename

734146