• DocumentCode
    2412149
  • Title

    Semiconductor lasers with 2.5 Gb/s operation at 200/spl deg/C

  • Author

    Vail, E.C. ; O´Brien, S. ; Ziari, M. ; Lang, R.

  • Author_Institution
    SDL Inc., San Jose, CA, USA
  • fYear
    1998
  • fDate
    4-8 Oct. 1998
  • Firstpage
    83
  • Lastpage
    84
  • Abstract
    We demonstrate the first high speed InGaAs QW semiconductor lasers at 200°C. For p-p drive currents of 30 mA and 7.5 mA, operation at 2.5 Gb/s and 1.2 Gb/s are demonstrated, respectively.
  • Keywords
    III-V semiconductors; electro-optical modulation; gallium arsenide; high-speed optical techniques; indium compounds; quantum well lasers; 2.5 Gbit/s; 200 C; 30 mA; 7.5 mA; InGaAs; high speed InGaAs QW semiconductor lasers; p-p drive currents; Frequency; Semiconductor lasers; Signal analysis; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
  • Conference_Location
    Nara, Japan
  • ISSN
    0899-9406
  • Print_ISBN
    0-7803-4223-2
  • Type

    conf

  • DOI
    10.1109/ISLC.1998.734148
  • Filename
    734148
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2412149