Multifunction chip set for T/R module receive path

Author

Willems, D. ; Bahl, I. ; Pollman, M. ; Jorgenson, J. ; Griffin, E. ; Coluzzi, M. ; Tantod, S. ; Andricos, C.

Author_Institution

ITT Gallium Arsenide Technol. Center, Roanoke, VA, USA

fYear

1990

fDate

8-10 May 1990

Firstpage

113

Abstract

Design and test results are presented for multifunction MMICs (monolithic microwave integrated circuits) for C-band transmit receive (T/R) modules. This small signal chip set contains the entire receive path (five stages of amplification and ten passive devices) in just three chips. These ICs, fabricated with the multifunctional self-aligned gate. (MSAG) process, demonstrate a high level of integration, excellent performance, and a good yield. The variable-gain low-noise amplifier has 30+or-1-dB gain and a 2.5-dB noise figure, the phase shifter/SPDT switch has 8+or-1-dB loss, and the buffer amplifier has 6.5+or-0.2-dB gain and a 3.5-dB noise figure. The average yield for these circuits was 40% or better.<>

Keywords

MMIC; field effect integrated circuits; integrated circuit technology; microwave amplifiers; 2.5 dB; 3.5 dB; 30 dB; 6.5 dB; 8 dB; C-band transmit receive; MSAG; T/R module receive path; buffer amplifier; entire receive path; five stages of amplification; gain; high level of integration; monolithic microwave integrated circuits; multifunction MMICs; multifunction chip set; multifunctional self-aligned gate; noise figure; passive devices; performance; phase shifter/SPDT switch; small signal chip set; test results; three chip set; variable-gain low-noise amplifier; yield; Circuit testing; Integrated circuit testing; Low-noise amplifiers; MMICs; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Noise figure; Phase shifters; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1990., IEEE MTT-S International

Conference_Location

Dallas, TX

Type

conf

DOI

10.1109/MWSYM.1990.99536

Filename

99536