Title :
New DRAM HCI qualification method emphasizing on repeated memory access
Author :
Chia, Pierre Chor-Fung ; Wen, Shi-Jie ; Baeg, Sang H.
Abstract :
This paper proposes a new accelerated HCI reliability stress method specifically targeting DRAM components. The merit of this stress method is to provide the worst case design requirement of the data word access rate.
Keywords :
DRAM chips; hot carriers; integrated circuit design; integrated circuit reliability; life testing; DRAM HCI qualification method; DRAM components; accelerated HCI reliability stress method; data word access rate; repeated memory access; worst case design requirement; Degradation; Human computer interaction; Random access memory; Reliability; Stress; Timing; Transistors;
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International
Conference_Location :
Stanford Sierra, CA
Print_ISBN :
978-1-4244-8521-5
DOI :
10.1109/IIRW.2010.5706509
