• DocumentCode
    2412216
  • Title

    New DRAM HCI qualification method emphasizing on repeated memory access

  • Author

    Chia, Pierre Chor-Fung ; Wen, Shi-Jie ; Baeg, Sang H.

  • fYear
    2010
  • fDate
    17-21 Oct. 2010
  • Firstpage
    142
  • Lastpage
    144
  • Abstract
    This paper proposes a new accelerated HCI reliability stress method specifically targeting DRAM components. The merit of this stress method is to provide the worst case design requirement of the data word access rate.
  • Keywords
    DRAM chips; hot carriers; integrated circuit design; integrated circuit reliability; life testing; DRAM HCI qualification method; DRAM components; accelerated HCI reliability stress method; data word access rate; repeated memory access; worst case design requirement; Degradation; Human computer interaction; Random access memory; Reliability; Stress; Timing; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International
  • Conference_Location
    Stanford Sierra, CA
  • ISSN
    1930-8841
  • Print_ISBN
    978-1-4244-8521-5
  • Type

    conf

  • DOI
    10.1109/IIRW.2010.5706509
  • Filename
    5706509
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2412216