DocumentCode
2412263
Title
Polarization anisotropy in asymmetric oxide-aperture VCSELs
Author
Kyoung-Ho Ha ; Yong-Hee Lee
Author_Institution
Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
fYear
1998
fDate
4-8 Oct. 1998
Firstpage
95
Lastpage
96
Abstract
Strong polarization discrimination is observed from asymmetric oxide-aperture VCSELs. Direction of dominant polarization is perpendicular to the longer edge of the slit-shaped oxide aperture. Polarization extinction ratio up to 184 is observed from a 1.4-/spl mu/m oxide aperture VCSEL.
Keywords
laser modes; light polarisation; semiconductor lasers; surface emitting lasers; symmetry; 1.4 mum; asymmetric oxide-aperture VCSELs; dominant polarization direction; oxide aperture VCSEL; polarization anisotropy; polarization extinction ratio; slit-shaped oxide aperture; strong polarization discrimination; Anisotropic magnetoresistance; Apertures; Dielectric losses; Electromagnetic scattering; Electromagnetic wave polarization; Oxidation; Protons; Surface emitting lasers; Tellurium; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location
Nara, Japan
ISSN
0899-9406
Print_ISBN
0-7803-4223-2
Type
conf
DOI
10.1109/ISLC.1998.734154
Filename
734154
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