Monolithic 2D-VCSEL array with >2 W CW output power

Author

Francis, D. ; Hao-Lin Chen ; Wupen Yuen ; Gabriel Li ; Chang-Hasnain, C.

Author_Institution

California Univ., Berkeley, CA, USA

fYear

1998

fDate

4-8 Oct. 1998

Firstpage

99

Lastpage

100

Abstract

CW output power in excess of 2 watts was obtained from an InGaAs DBR MQW VCSEL array. This is the highest CW power achieved from a monolithic VCSEL structure to date. We report the performance of several VCSEL arrays. By active cooling of the laser arrays, we were able to repeatedly generate >2 W CW output power at 940 nm. This is the highest CW output power achieved from a monolithic VCSEL array to date.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; infrared sources; laser transitions; quantum well lasers; semiconductor laser arrays; surface emitting lasers; 2 W; 940 nm; CW output power; InGaAs; InGaAs DBR MQW VCSEL array; active cooling; monolithic 2D-VCSEL array; monolithic VCSEL array; monolithic VCSEL structure; Apertures; Cooling; Heat sinks; Optical arrays; Optical device fabrication; Power generation; Pump lasers; Semiconductor laser arrays; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Conference_Location

Nara, Japan

ISSN

0899-9406

Print_ISBN

0-7803-4223-2

Type

conf

DOI

10.1109/ISLC.1998.734156

Filename

734156