Hybrid distributed amplifier using MCM-D based on selectively anodized aluminium substrate

Author

Sohn, Bo-In ; Shin, Seong-Ho ; Kwon, Young-Se

Author_Institution

Korea Adv. Inst. of Sci. & Technol., Daejeon

fYear

2007

fDate

9-12 Oct. 2007

Firstpage

1618

Lastpage

1621

Abstract

This paper presents a hybrid four-stage distributed amplifier using thin film multi-chip module deposited(MCM-D) based on selectively anodized aluminium substrate with fully embedded passives. Four bare GaAs heterojunction field effect transistors are attached on the all passive-integrated aluminium substrate and interconnected to other devices by wire-bonding. The hybrid distributed amplifier had a unity gain maximum cut-off frequency of 15 GHz, a maximum gain of 8.9 dB over 0.6 GHz to 14.2 GHz band, and a maximum gain flatness of 7.4plusmn1.5 dB over 0.6 GHz to 14.2 GHz bandwidth. The total size is 2.8 mm times 5.5 mm including the bias circuitries and bonding pads.

Keywords

III-V semiconductors; aluminium; anodisation; field effect transistor circuits; field effect transistors; gallium arsenide; hybrid integrated circuits; lead bonding; microwave amplifiers; microwave integrated circuits; multichip modules; passive networks; semiconductor heterojunctions; thin film circuits; wideband amplifiers; Al; GaAs; bias circuitries; bonding pads; frequency 15 GHz; gain 8.9 dB; heterojunction field effect transistors; hybrid four-stage distributed amplifier; passive-integrated aluminium substrate; selectively anodized aluminium substrate; size 2.8 mm; size 5.5 mm; thin film multichip module deposition; wire-bonding; Aluminum; Cutoff frequency; Distributed amplifiers; FETs; Gain; Gallium arsenide; Heterojunctions; Integrated circuit interconnections; Sputtering; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-001-9

Type

conf

DOI

10.1109/EUMC.2007.4405520

Filename

4405520