Tutorials

Author

Grasser, Tibor ; Lloyd, John

Author_Institution

Tech. Univ. Wien, Vienna, Austria

fYear

2010

fDate

17-21 Oct. 2010

Firstpage

168

Lastpage

170

Abstract

The tutorial covers the following: [Reliability and degradation mechanism of AlGaN/GaN high electron mobility transistors, Recent results from (single) defect spectroscopy and a discussion of controversial topics, Radiation-induced soft errors: status quo and key challenges, Latest developments in failure modeling of electromigration and ILD TDDB, Hot-carrier degradation issues in advanced CMOS nodes, TDDB physics: transitioning from silica to high-k gate dielectrics.]

Keywords

CMOS integrated circuits; III-V semiconductors; aluminium compounds; electromigration; failure analysis; gallium compounds; high electron mobility transistors; high-k dielectric thin films; hot carriers; low-k dielectric thin films; radiation effects; semiconductor device breakdown; semiconductor device measurement; semiconductor device reliability; wide band gap semiconductors; AlGaN-GaN; CMOS device degradation; ILD TDDB; electromigration failure modeling; high electron mobility transistor reliability; high-k gate dielectrics; hot-carrier degradation; low-k interlevel dielectric; radiation-induced soft error; single defect spectroscopy; time dependent dielectric breakdown;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report (IRW), 2010 IEEE International

Conference_Location

Fallen Leaf, CA

ISSN

1930-8841

Print_ISBN

978-1-4244-8521-5

Type

conf

DOI

10.1109/IIRW.2010.5706516

Filename

5706516