Room-temperature pulsed operation of 1.5 /spl mu/m triple fused vertical cavity surface emitting lasers with in-situ built-in lateral current confinement

Author

Syrbu, A.V. ; Lakovlev, V.P. ; Berseth, C.-A. ; Dehaese, O. ; Rudra, A. ; Kapon, E. ; Stark, C. ; Boucart, J. ; Gaborif, F. ; Jacquet, J.

Author_Institution

Fed. Inst. of Technol., Lausanne, Switzerland

fYear

1998

fDate

4-8 Oct. 1998

Firstpage

105

Lastpage

106

Abstract

Operation of a new triple fused long wavelength VCSEL structure is demonstrated for the first time. In this structure both highly resistive p-AlGaAs/GaAs DBR and strained p-GaAs/p-InP fused junction are replaced with a composite mirror comprising a p-InGaAsP/InP partial DBR fused to an undoped AlGaAs/GaAs DBR and an isoperiodic, low barrier p-InP/p-InGaAsP fused junction.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser mirrors; surface emitting lasers; 1.5 mum; 1.55 mum; AlGaAs-GaAs; GaAs; InGaAsP; InGaAsP MQW DBR lasers; InP; composite mirror; highly resistive p-AlGaAs/GaAs DBR laser junctions; in-situ built-in lateral current confinement; isoperiodic low barrier p-InP/p-InGaAsP fused junction; long wavelength VCSEL structure; p-InGaAsP/InP partial DBR composite laser mirrors; room-temperature pulsed operation; strained p-GaAs/p-InP fused junction; triple fused vertical cavity surface emitting lasers; undoped AlGaAs/GaAs DBR laser mirrors; Conductivity; Distributed Bragg reflectors; Etching; Gallium arsenide; Indium phosphide; Laser fusion; Mirrors; Optical pulses; Vertical cavity surface emitting lasers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Conference_Location

Nara, Japan

ISSN

0899-9406

Print_ISBN

0-7803-4223-2

Type

conf

DOI

10.1109/ISLC.1998.734159

Filename

734159