• DocumentCode
    2412408
  • Title

    Designing better AlGaInP based visible VCSELs

  • Author

    Sale, T.E. ; Reilly, E.P.O. ; Mackett, P. ; Onischenko, A.O. ; Adams, A.R. ; Woodhead, J. ; Button, C.C. ; Pinches, S.M.

  • Author_Institution
    Dept. of Phys., Surrey Univ., Guildford, UK
  • fYear
    1998
  • fDate
    4-8 Oct. 1998
  • Firstpage
    109
  • Lastpage
    110
  • Abstract
    AlGaInP edge emitting lasers with AlGaAs cladding mimic the GaInP SQW active region of surface-emitters. We use these to determine limitations in the absence of cavity effects and predict much improved visible VCSELs will now be possible.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; surface emitting lasers; AlGaAs cladding; AlGaAs cladding mimic; AlGaInP; AlGaInP based visible VCSELs; AlGaInP edge emitting lasers; GaInP; GaInP SQW active region; active region; cavity effects; surface-emitters; visible VCSELs; Electrons; Gallium arsenide; Heating; Hysteresis; Optical bistability; Optical saturation; Optical switches; Temperature dependence; Ultraviolet sources; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
  • Conference_Location
    Nara, Japan
  • ISSN
    0899-9406
  • Print_ISBN
    0-7803-4223-2
  • Type

    conf

  • DOI
    10.1109/ISLC.1998.734161
  • Filename
    734161
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2412408