Negative differential resistance of an intracavity voltage-controlled absorber in a vertical cavity surface emitting laser

Author

Stone, R.J. ; Hudgings, J.A. ; Lim, S.F. ; Li, G.S. ; Lau, K.Y. ; Chang-Hasnain, C.J.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1998

fDate

4-8 Oct. 1998

Firstpage

113

Lastpage

114

Abstract

We present the first detailed investigation of the sharp negative differential resistance (NDR) within a VCSEL intracavity quantum well absorber. The intensity dependent NDR is governed by the position of the Fabry-Perot wavelength relative to the absorber excitonic peak.

Keywords

III-V semiconductors; excitons; gallium arsenide; indium compounds; optical saturable absorption; quantum well lasers; surface emitting lasers; Fabry-Perot wavelength; InGaAs; VCSEL intracavity quantum well absorber; absorber excitonic peak; intensity dependent NDR; intracavity voltage-controlled absorber; negative differential resistance; sharp negative differential resistance; vertical cavity surface emitting laser; Electric resistance; Electromagnetic wave absorption; Fabry-Perot; Photoconductivity; Quantum well lasers; Surface emitting lasers; Surface resistance; Vertical cavity surface emitting lasers; Voltage; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Conference_Location

Nara, Japan

ISSN

0899-9406

Print_ISBN

0-7803-4223-2

Type

conf

DOI

10.1109/ISLC.1998.734162

Filename

734162