• DocumentCode
    2412466
  • Title

    Features of activity transistors in a structure of a very high frequency of generators with an external feedback

  • Author

    Mazeeva, H.M. ; Fursaev, M.A.

  • Author_Institution
    Saratov State Tech. Univ., Russia
  • fYear
    2002
  • fDate
    18-19 Sept. 2002
  • Firstpage
    59
  • Lastpage
    63
  • Abstract
    Analysis of electric regimes of transistors in composition of SHF generations with external back connection and of limitations on values of parameters, which characterize these regime. Basis of necessity of insert loosing elements in back connection of these generations.
  • Keywords
    feedback; microwave generation; microwave transistors; SHF generator; activity transistor; back connection; external feedback; Character generation; Frequency; Nonlinear optics; Optical propagation; Optical pulses; Optimized production technology; Particle beam optics; Pattern analysis; Pattern formation; Resonance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Actual Problems of Electron Devices Engineering, 2002. (APEDE 2002). Fifth International Conference on
  • Conference_Location
    Saratova, Russia
  • Print_ISBN
    5-7433-1065-3
  • Type

    conf

  • DOI
    10.1109/APEDE.2002.1044895
  • Filename
    1044895
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2412466