• DocumentCode
    2412584
  • Title

    Quasi-two-dimension physic-topological model of field-effect transistors (FETs) in view of the self-heating effect

  • Author

    Sivyakov, D.B. ; Boldirev, D.R.

  • Author_Institution
    Saratov State Tech. Univ., Russia
  • fYear
    2002
  • fDate
    18-19 Sept. 2002
  • Firstpage
    82
  • Lastpage
    85
  • Abstract
    In field-effect transistors of average and high power the influence of power, pick out in the channel on transistor characteristics is observed. This phenomenon is called the self-heating effect. The quasi-two-dimension physic-topological model of FETs in view of the self-heating effect is offered in the report.
  • Keywords
    field effect transistors; semiconductor device models; field effect transistor; quasi-two-dimensional physical-topological model; self-heating effect; FETs; Heating; Helium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Actual Problems of Electron Devices Engineering, 2002. (APEDE 2002). Fifth International Conference on
  • Conference_Location
    Saratova, Russia
  • Print_ISBN
    5-7433-1065-3
  • Type

    conf

  • DOI
    10.1109/APEDE.2002.1044901
  • Filename
    1044901
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2412584