DocumentCode
2412596
Title
Highly reliable GaInAs/GaInP 0.98 /spl mu/m window laser
Author
Hashimoto, J.-I. ; Ikoma, N. ; Murata, M. ; Katsuyama, T.
Author_Institution
Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan
fYear
1998
fDate
4-8 Oct. 1998
Firstpage
131
Lastpage
132
Abstract
A GaInAs-GaInP 0.98 /spl mu/m window strained SQW laser was fabricated for the first time using a selective nitrogen ion implantation and a subsequent annealing. Remarkable tolerances to a catastrophic optical destruction (COD) and an internal degradation have been obtained.
Keywords
III-V semiconductors; annealing; gallium arsenide; gallium compounds; indium compounds; infrared sources; ion implantation; laser reliability; laser transitions; optical fabrication; quantum well lasers; 0.98 mum; COD; GaInAs-GaInP; GaInAs-GaInP 0.98 /spl mu/m window strained SQW laser fabrication; catastrophic optical destruction; highly reliable GaInAs/GaInP 0.98 /spl mu/m window laser; internal degradation; selective nitrogen ion implantation; subsequent annealing; Aging; Annealing; Degradation; Fiber lasers; Ion implantation; Laser stability; Life testing; Nitrogen; Pump lasers; Quantum well lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location
Nara, Japan
ISSN
0899-9406
Print_ISBN
0-7803-4223-2
Type
conf
DOI
10.1109/ISLC.1998.734171
Filename
734171
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