Fabrication and performances of AlGaAs-GaAs wavelength distributed feedback lasers and distributed Bragg reflector lasers utilizing first-order diffraction grating formed by periodic groove structure

Author

Oku, S. ; Ishii, T. ; Iga, R. ; Hirono, T.

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

fYear

1998

fDate

4-8 Oct. 1998

Firstpage

135

Lastpage

136

Abstract

Distributed feedback (DFB) lasers and distributed Bragg reflector (DBR) lasers using a grooved grating structure with 1.50 nm period are demonstrated on an InGaAs-GaAs strained quantum well active wafer without a re-growth process. The lasers exhibit a sharply controlled spectra with threshold currents of 14 mA as low as those of conventional Fabry Perot type lasers.

Keywords

III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; distributed feedback lasers; gallium arsenide; indium compounds; infrared spectra; optical fabrication; quantum well lasers; 14 mA; AlGaAs-GaAs; AlGaAs-GaAs wavelength distributed feedback lasers; DBR lasers; DFB lasers; InGaAs-GaAs; InGaAs-GaAs strained quantum well active wafer; InGaAs-GaAs strained quantum well lasers; distributed Bragg reflector lasers; first-order diffraction grating; grooved grating structure; periodic groove structure; re-growth process; sharply controlled spectra; threshold currents; Distributed Bragg reflectors; Distributed feedback devices; Etching; Gallium arsenide; Laser feedback; Optical device fabrication; Optical waveguides; Quantum well lasers; Semiconductor lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Conference_Location

Nara, Japan

ISSN

0899-9406

Print_ISBN

0-7803-4223-2

Type

conf

DOI

10.1109/ISLC.1998.734173

Filename

734173