High-performance, reliable, 730 nm-emitting Al-free active region diode lasers

Author

Al-Muhanna, A. ; Wade, J.K. ; Earles, T. ; Mawst, L.J. ; Fu, R.J.

Author_Institution

Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA

fYear

1998

fDate

4-8 Oct. 1998

Firstpage

139

Lastpage

140

Abstract

Compressively-strained InGaAsP QW active (/spl lambda/=732 nm) diode lasers achieve 2.4 W CW front-facet power from 100 /spl mu/m-wide apertures, with reliable operation at 0.5 W CW. Record-high characteristic temperatures for the threshold current and the differential quantum efficiency, T/sub 0/=115 K and T/sub 1/=285 K are obtained by growing on misoriented substrates.

Keywords

Debye temperature; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser reliability; laser transitions; quantum well lasers; semiconductor device reliability; 0.5 W; 100 mum; 115 K; 2.4 W; 285 K; 730 nm; 730 nm-emitting Al-free active region diode lasers; 732 nm; CW front-facet power; InGaAsP; InGaAsP QW active diode lasers; characteristic temperatures; compressively-strained; differential quantum efficiency; high-performance lasers; misoriented substrates; reliable operation; threshold current; Apertures; Diode lasers; Electrons; Photonics; Power generation; Reliability engineering; Surface emitting lasers; Temperature; Thermal management; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International

Conference_Location

Nara, Japan

ISSN

0899-9406

Print_ISBN

0-7803-4223-2

Type

conf

DOI

10.1109/ISLC.1998.734175

Filename

734175