DocumentCode
2412691
Title
High temperature self-pulsation in 650 nm wavelength, AlGaInP lasers with an epitaxially integrated saturable absorber
Author
Summers, H.D. ; Molloy, C.H. ; Smowton, P.M. ; Rees, P. ; Pierce, I. ; Jones, Denise R.
Author_Institution
Dept. of Phys. & Astron., Wales Univ., Cardiff, UK
fYear
1998
fDate
4-8 Oct. 1998
Firstpage
145
Lastpage
146
Abstract
AlGaInP MQW lasers have been fabricated with n or p-doped absorbing epitaxial layers. Self-pulsation is seen, up to a temperature of 100/spl deg/C. In the p-doped devices which have an absorber recovery time of 0.4 ns.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; integrated optics; laser transitions; optical saturable absorption; quantum well lasers; semiconductor epitaxial layers; 0.4 ns; 100 C; 650 nm; AlGaInP; AlGaInP MQW lasers; AlGaInP lasers; absorber recovery time; epitaxially integrated saturable absorber; high temperature self-pulsation; n-doped absorbing epitaxial layers; p-doped absorbing epitaxial layers; p-doped devices; self-pulsation; Epitaxial layers; Laser mode locking; Laser modes; Laser theory; Luminescence; Optical control; Optical waveguides; Quantum well lasers; Temperature distribution; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location
Nara, Japan
ISSN
0899-9406
Print_ISBN
0-7803-4223-2
Type
conf
DOI
10.1109/ISLC.1998.734178
Filename
734178
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