Title :
InGaAlP Zn-diffused window structure laser diodes fabricated by using highly Zn-doped GaAs layers
Author :
Watanabe, M. ; Ito, Y. ; Shiozawa, W. ; Okada, M. ; Horiuchi, O. ; Tanaka, A. ; Gen-Ei, K. ; Shimada, N. ; Okuda, H. ; Fukuoka, K.
Author_Institution :
Semicond. Group, Toshiba Corp., Kawasaki, Japan
Abstract :
685 nm InGaAlP window structure laser diodes have been obtained with a new Zn diffusion method utilizing highly Zn-doped GaAs layers as a Zn source. The method has some advantages and superior controllability.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; indium compounds; laser accessories; optical fabrication; optical windows; ridge waveguides; semiconductor lasers; waveguide lasers; 685 nm; GaAs; GaAs:Zn; InGaAlP; Zn source; Zn-diffused window structure laser diodes; controllability; fabrication; highly Zn-doped GaAs layers; laser diodes; window structure; Annealing; Atomic beams; Chemical lasers; DVD; Diode lasers; Gallium arsenide; Indium tin oxide; Mirrors; Quantum well devices; Zinc;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734179
