Title :
1.5 /spl mu/m buried heterostructure InGaAsP/InP MQW laser with native-oxidized InAlAs current blocking layer
Author :
Wang Zhi Jie ; Chua Soo Jin ; Zhou Fan ; Zhu Hong Liang ; Wang Wei ; Wu Rong Han
Author_Institution :
Inst. of Mater. Res. & Eng., Nat. Univ. of Singapore, Singapore
Abstract :
We first proposed and realized a 1.5 /spl mu/m buried hetero-structure InGaAsP-InP MQW laser with a native-oxidized InAlAs current block layer (NO-InAlAs-BH). The primary results are Ith=5.6 mA, slope efficiency /spl eta/=0.23 mW/mA and an linear output power surpassing 22.5 mW.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser transitions; oxidation; quantum well lasers; 1.5 mum; 22.5 mW; 5.6 mA; InAlAs; InGaAsP-InP; InGaAsP-InP MQW laser; InGaAsP/InP MQW laser; buried heterostructure; linear output power; native-oxidized InAlAs current block layer; native-oxidized InAlAs current blocking layer; slope efficiency; Acceleration; Indium compounds; Indium phosphide; Laser theory; Leakage current; Oxidation; P-n junctions; Power generation; Quantum well devices; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734184
