Title :
High temperature GaInAs/AlGaAs lasers with improved carrier confinement due to short period superlattice quantum well barriers
Author :
Schtafer, F. ; Mayer, B. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Tech. Phys., Wurzburg Univ., Germany
Abstract :
The high temperature properties of GaInAs-AlGaAs lasers were improved by using short period superlattice barriers. Record T/sub 0/-values of 320 K (up to 75/spl deg/C) and maximum operating temperatures above 240/spl deg/C could be achieved.
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; indium compounds; quantum well lasers; semiconductor superlattices; 240 C; 320 K; 75 C; GaInAs-AlGaAs; T/sub 0/-values; high temperature GaInAs-AlGaAs lasers; high temperature properties; improved carrier confinement; maximum operating temperatures; short period superlattice barriers; short period superlattice quantum well barriers; Carrier confinement; Gallium arsenide; Laser stability; Performance loss; Power lasers; Quantum well lasers; Superlattices; Temperature dependence; Thermionic emission; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734188
