Title :
Effects of quantum well recombination losses on the internal differential efficiency of multi-quantum-well lasers
Author :
Piprek, J. ; Abraham, P. ; Bowers, J.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Non-uniform carrier distribution in InGaAsP-InP multi-quantum-well (MQW) laser diodes is found to cause QW recombination losses to increase with rising injection current above threshold. These losses can have a larger effect on the internal differential efficiency than carrier leakage.
Keywords :
III-V semiconductors; carrier density; carrier mobility; gallium arsenide; gallium compounds; indium compounds; optical losses; quantum well lasers; InGaAsP-InP; InGaAsP-InP MQW laser diodes; QW recombination losses; above threshold; carrier leakage; internal differential efficiency; multi-quantum-well lasers; nonuniform carrier distribution; quantum well recombination losses; rising injection current; Charge carrier density; Charge carrier processes; Diode lasers; Electrons; Quantum well devices; Quantum well lasers; Radiative recombination; Spontaneous emission; Stimulated emission; Wavelength measurement;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734189
