Title :
Monolithic integrated DFB laser with electroabsorption modulator by identical active layer structure composed of two different QW types
Author :
Stegmuller, B. ; Schier, M. ; Kunkel, F. ; Rieger, J.
Author_Institution :
Corp. Technol., Siemens AG, Munich, Germany
Abstract :
The first monolithic integration of a 1.55 /spl mu/m ridge waveguide DFB laser with an EA modulator using an identical active MOW-layer structure composed of two different QW types is reported. Minimum threshold currents of 17 mA, voltage swing <1.5 V for 10 dB extinction ratio and 2 Gbit/s modulation capability are obtained.
Keywords :
distributed feedback lasers; electro-optical modulation; electroabsorption; infrared sources; integrated optoelectronics; laser transitions; quantum well lasers; ridge waveguides; waveguide lasers; 1.5 V; 1.55 mum; 17 mA; 2 Gbit/s; EA modulator; Gbit/s modulation capability; QW types; active MOW-layer structure; electroabsorption modulator; extinction ratio; identical active layer structure; minimum threshold currents; monolithic integrated DFB laser; monolithic integration; ridge waveguide DFB laser; voltage swing; Chirp modulation; Extinction ratio; Laser theory; Monolithic integrated circuits; Optical design; Optical device fabrication; Quantum well devices; Quantum well lasers; Threshold current; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-4223-2
DOI :
10.1109/ISLC.1998.734194
