Author :
Vorobjev, L.E. ; Firsov, D.A. ; Shalygin, V.A. ; Tulupenko, V.N. ; Shernyakov, Yu.M. ; Egorov, A.Yu. ; Zhukov, A.E. ; Kovsh, A.R. ; Kop´ev, P.S. ; Kochnev, I.V. ; Ledentsov, N.N. ; Maximov, M.V. ; Ustinov, V.M. ; Alferov, Zh.I.
Keywords :
infrared sources; laser transitions; quantum well lasers; semiconductor quantum dots; semiconductor quantum wells; spontaneous emission; IR sources; current threshold; electron interlevel transitions; far-infrared spontaneous emission; hole interlevel transitions; laser transitions; near-infrared lasing; quantum dot lasers; quantum well lasers; quantum well structures; simultaneous stimulated interband emission; Charge carrier processes; Finite impulse response filter; Laser transitions; Quantum cascade lasers; Quantum dot lasers; Quantum dots; Quantum well lasers; Semiconductor lasers; Spontaneous emission; US Department of Transportation;